Browse Prior Art Database

Polishing End-Point Detection

IP.com Disclosure Number: IPCOM000100337D
Original Publication Date: 1990-Apr-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 20K

Publishing Venue

IBM

Related People

Esslinger, DC: AUTHOR [+2]

Abstract

When removing one material from another of different hardness by chemical-mechanical polishing, the change in material at the interface can be noted by detecting the change in surface temperature.

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Polishing End-Point Detection

       When removing one material from another of different
hardness by chemical-mechanical polishing, the change in material at
the interface can be noted by detecting the change in surface
temperature.

      For example, in integrated circuit fabrication, the completion
of removal of silicon from a silicon dioxide or silicon nitride layer
during inverted wafer polishing is determined by inserting a
fluorescent phosphor probe on the end of a light pipe reaching a
point adjacent the wafer back surface.  The light pipe transmits
light pulses periodically that are necessary for temperature
measurement, and a change indicates a change in material composition
being polished. Other temperature measuring methods may be employed.