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Disposition of High Quality Oxides Using a Teos Precursor

IP.com Disclosure Number: IPCOM000100418D
Original Publication Date: 1990-Apr-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 85K

Publishing Venue

IBM

Related People

Nguyen, BC: AUTHOR [+3]

Abstract

Disclosed is a method of using a TEOS/He/O2/O3 mixture to deposit "thermal oxide" quality SiO2 films over a wide range of deposition rates and film properties at 400-600oC in a parallel plate process chamber with an in-situ chamber clean capability.

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Disposition of High Quality Oxides Using a Teos Precursor

       Disclosed is a method of using a TEOS/He/O2/O3 mixture to
deposit "thermal oxide" quality SiO2 films over a wide range of
deposition rates and film properties at 400-600oC in a parallel plate
process chamber with an in-situ chamber clean capability.

      Two different chemistries are used to deposit high quality SiO2
films from the TEOS precursor as shown below:
      1.  PECVD:  TEOS/He/ + O2 + He + RF = SiO2 + OTHER PRODUCTS
      2.  PYROLYTIC:  TEOS/He + O3 + He = SiO2 + OTHER PRODUCTS

      In the PECVD case, the reaction is initiated by the application
of the RF power to the gas mixture TEOS/O2/He. In the other case, the
pyrolytic reaction is initiated by the reaction between O radicals
from O3 and TEOS.  In both cases, the TEOS is bubbled to the process
chamber by He. Another independent He delivery line is available to
dilute the original TEOS/He mixture in order to vary the deposition
rates from 50-2500 Ao/min (Pyrolytic) and from 100-5000 Ao/min
(PECVD).  Prior to deposition, the wafer surface can be cleaned
in-situ with a low power plasma to remove any surface contamination.
In order to keep the deposition chamber clean and free of particles,
there is an in-situ chamber etch clean capability using a NF3/O2
chemistry.  The frequency and duration of the chamber clean depends
on the thickness of the oxide deposited.

      The components necessary to reduce the invention to practice
are present in a commercially available multi-chamber single wafer
tool.  The TEOS is delivered to the process chamber by He bubbling.
The process chamber is a cold wall chamber (55oC).

      The process temperature is in the range 300-650oC and process
pressure is in the range 1-90 Torr.  A RF generator (13.6 MHz) is
used to provide the power (50-650 W) during the PECVD TEOS SiO2
deposition or during the NF3/O2 in-situ chamber clean.  A corona
discharge cell is used to continuously generate the O3 needed for the
"Pyrolitic" deposition process.  An extra gas line is used to flow He
which is used as a dilutent in order to vary the deposition rates.
The wafer is placed on a susceptor which can be biased with another
independent RF...