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Simultaneous Silylation And Development Process

IP.com Disclosure Number: IPCOM000100421D
Original Publication Date: 1990-Apr-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Related People

Chiong, KN: AUTHOR [+3]

Abstract

Disclosed is a process by which an imaged surface can be both silylated and developed in the same process step. Resist selection is key and requires a polarity change such that the exposed resist or the unexposed resist surface is rendered silylatable. Another requirement is that the non-silylated resist must be soluble in the silylation carrier solvent. For example, hexamethylcyclotrisilazane (HMCTS)/xylene (1) works well for poly-t-butoxycarbonyloxystyrene (TBOC) (2). The exposed TBOC becomes polyhydroxystyrene, a silylatable polymer surface. TBOC is soluble in xylene and can be developed to yield a negative silylated image by this method.

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Simultaneous Silylation And Development Process

       Disclosed is a process by which an imaged surface can be
both silylated and developed in the same process step. Resist
selection is key and requires a polarity change such that the exposed
resist or the unexposed resist surface is rendered silylatable.
Another requirement is that the non-silylated resist must be soluble
in the silylation carrier solvent. For example,
hexamethylcyclotrisilazane (HMCTS)/xylene (1) works well for
poly-t-butoxycarbonyloxystyrene (TBOC) (2).  The exposed TBOC becomes
polyhydroxystyrene, a silylatable polymer surface.  TBOC is soluble
in xylene and can be developed to yield a negative silylated image by
this method. The procedure requires an underlayer, such as hardbaked
AZ-4110, which, when subjected to reactive ion etchings, easily gives
rise to a nice multilayer image, useful for mask making and many
device applications. A typical scheme follows:
   1) Coat AZ-4110-type resist on substrate and bake at 230oC to
yield a 1-micron crosslinked underlayer.
      2) Apply 0.3 - 0.5 microns of a TBOC-type resist as an imaging
layer.
      3) Expose the imaging layer with X-ray, E-beam or deep UV to
convert TBOC to polyhydroxystyrene in the exposed region.
      4) Dip the exposed, coated substrate into a warm silylation
bath (10% HMCTS/xylene solution) for 5 minutes.
      5) Rinse the substrate with FREON TF* for 30 seconds.
      6) Reactive ion etch the treated...