Browse Prior Art Database

Deposition of Thin Silicon Dioxide Layers

IP.com Disclosure Number: IPCOM000100555D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Malin, K: AUTHOR [+2]

Abstract

The layers are formed by low-pressure chemical vapor deposition, using a liquid source containing tetraethylorthosilicate (TEOS) and diluents.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Deposition of Thin Silicon Dioxide Layers

       The layers are formed by low-pressure chemical vapor
deposition, using a liquid source containing tetraethylorthosilicate
(TEOS) and diluents.

      In a flask 1 (see the figure), the liquid source 2 is
contained.  TEOS is the source of silicon and oxygen.  The diluents
serve to facilitate the dosage of TEOS and are compounds with
reactive properties similar to TEOS, with their reaction products,
such as CO2, not depositing.  The liquid source is sucked into the
low-pressure area of the deposition apparatus where it is evaporated.
 The flow of the source is controlled by needle valve 3 and flowmeter
4. The constituents of the source are drawn into reaction zone 5 by
vacuum pump 6, heated to a predetermined temperature by heater 7 and
reacted.  The reaction product of TEOS is deposited on substrates 8,
provided in reaction zone 5, until the desired layer thickness has
been reached.

      If the deposited layer is to comprise still further elements,
liquid substances, containing such elements, are mixed with the
liquid source prior to sucking in at a ratio adapted to the desired
layer composition.

      The thin deposited layers are homogeneous both with respect to
their layer thickness and composition.