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Borderless Contacts Trimmed by Embedded Line Conductor in an Organic Insulator

IP.com Disclosure Number: IPCOM000100576D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 60K

Publishing Venue

IBM

Related People

Cronin, J: AUTHOR [+2]

Abstract

The description of a process flow which allows for the formation a stud-down borderless contact to gates and diffusions in an organic insulator is outlined.

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Borderless Contacts Trimmed by Embedded Line Conductor in an Organic Insulator

       The description of a process flow which allows for the
formation a stud-down borderless contact to gates and diffusions in
an organic insulator is outlined.

      This process sequence allows borderless contacts trimmed by
embedded line conductors in organic insulators. Referring to Fig. 1,
first deposit organic over the gate conductor. Define contacts and
borderless contacts (PSC ion barrier pre-existing).  Next, fill the
contact hole with parylene (PPX) and planarize back to organic
insulator using chemical-mechanical polish. (A reverse sequence could
be used which deposits and planarizes PPX over the gate conductor.
The PPX is defined in the shape of the borderless contact. An organic
insulator is applied and planarized back, making the organic
insulator and PPX coplanar. This may be the preferred embodiment.)
Finally, a mask is defined which is used to create the embedded
conductor line shapes.

      Referring to Fig. 2, the organic insulator is reactive ion
etched (RIE) in O2 to define line conductor troughs. Utilizing the
same mask mentioned above and at the same time, the PPX is RIE with
O2 to remove the PPX, exposing the diffusion area to make contact.
Note that this sequence has the same effect on the conductor shape
being used to trim the contact shape for enhancement of ground rules.
After the mask is removed, a metal is deposited and planarized to
create a line...