Browse Prior Art Database

Plasma Removal of a Titanium Nitride Film

IP.com Disclosure Number: IPCOM000100608D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 1 page(s) / 25K

Publishing Venue

IBM

Related People

Ebel, CJ: AUTHOR [+3]

Abstract

By reversing conventional passivation and photoresist stripping plasma treatments, titanium nitride (TiN) is removed cleanly.

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Plasma Removal of a Titanium Nitride Film

       By reversing conventional passivation and photoresist
stripping plasma treatments, titanium nitride (TiN) is removed
cleanly.

      Fluorinated residual byproducts of etching titanium, aluminum/
copper/silicon (TACS) and from passivation of chlorinated residuals
on line edges by use of an ionized fluorocarbon and oxygen (O2) gas
mixture then stripping photoresist with an O2 plasma, makes removal
of a top layer of titanium nitride (TiN) difficult.  By stripping
resist using O2 plasma before the fluorocarbon passivation treatment,
TiN is cleanly removed by the fluorocarbon and O2 ionized gas.

      A film stack comprised of Ti + Al/Cu/Si + TiN + patterned
photoresist is first exposed to reactive ion etching (RIE) using
chlorinated hydrocarbon gas mixtures in a conventional manner.  Next,
photoresist is removed by an O2 plasma.  An in-situ change to the
fluorocarbon + O2 passivating gas mixture then removes the TiN layer
cleanly.