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Pattern And Structure for Measuring Electrically Both Lines And Spaces Of an Insulator

IP.com Disclosure Number: IPCOM000100632D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-15
Document File: 2 page(s) / 107K

Publishing Venue

IBM

Related People

Burbo, JH: AUTHOR [+3]

Abstract

A precise electrical measurement method is provided for accurately determining process bias and tolerances for submicron insulating patterns.

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This is the abbreviated version, containing approximately 52% of the total text.

Pattern And Structure for Measuring Electrically Both Lines And Spaces Of an Insulator

       A precise electrical measurement method is provided for
accurately determining process bias and tolerances for submicron
insulating patterns.

      Optical and E-beam measurement techniques do not have the
accuracy, precision, and/or speed needed to determine biases and
tolerances for the development and control of future sub-micron
lithographic technologies. In order to measure electrically lines
patterned in insulators, such as resist, these patterns must be made
conductive or be replicated in a conductor. A patterned structure
that permits electrical measurement of both lines and complimentary
spaces is disclosed.

      A top view of the test pattern structure is shown in the figure
and a cross-section taken through A-A is also shown. Note that a
split (mirror image) pattern is utilized. This design permits the
electrical measurement of both lines and spaces simultaneously, and
allows the measurement of electrical parameters on insulating or high
resistivity layers.  The resist pattern (open regions) and areas
where the resist is removed (cross-hatched regions) is shown in the
figure. A trench (double cross-hatched region) is etched into an
insulator, such as SiO2 around the test pattern. It can be seen from
the cross-section view that the trench is etched to a depth greater
than the thickness of the metal which is deposited in lift-off
fashion over the entire pattern. The lift-off process, in combination
with the recessed insulator, permit two separate conductive patterns
to be realized, i.e., one in the developed pattern and one on top of
the pattern. This four-point probe configuration is then used to
determine the line width of both the resist line and the resist space
simultaneously utilizing a Prometrix LM20 or EM-1 measurement s...