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No Flow Underfill Dopant Filler for X-Ray Detection of Entrapped Underfill in the First Level Interconnects

IP.com Disclosure Number: IPCOM000100645D
Publication Date: 2005-Mar-15
Document File: 2 page(s) / 13K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that uses surface-treated metal particles that have non-electrically conductive exteriors; the particles adhere to the oxide/nitride layer, and have a metallic interior that can be detected through conventional microelectronics x-ray techniques (e.g. Fein focus). Benefits include a solution that can be used during development, as well as high volume manufacturing.

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No Flow Underfill Dopant Filler for X-Ray Detection of Entrapped Underfill in the First Level Interconnects

Disclosed is a method that uses surface-treated metal particles that have non-electrically conductive exteriors; the particles adhere to the oxide/nitride layer, and have a metallic interior that can be detected through conventional microelectronics x-ray techniques (e.g. Fein focus). Benefits include a solution that can be used during development, as well as high volume manufacturing.

Background

Trapped underfill in the first-level interconnects cannot be distinguished from first-level interconnect voids when using non-destructive test methods (i.e. X-ray, CSAM or TSAM). Therefore, manual cross sectioning of each unit is required to determine the level of underfill entrapment. Underfill entrapment can impact product IMAX (i.e. the maximum current carrying capability) and reliability. In high magnification SEM photos underfill filler and the underfill organic matrix are both present in the entrapment.

General Description

In the disclosed method, the surface-treated metal particles have non-electrically conductive exteriors. The treated particles are added to the no flow underfill material (i.e. first-level interconnect underfill) in addition to the conventional silica filler particles. The dopant filler is added in sufficient quantity to enable them to be detected in the first-level interconnects, but not so much as to prevent a change (i.e. increase) in the underfill...