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Self-Aligned Aluminum Gate Process

IP.com Disclosure Number: IPCOM000100762D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 20K

Publishing Venue

IBM

Related People

Hagmann, D: AUTHOR [+2]

Abstract

The known temperature problem of forming devices with an aluminum (Al) gate and self-aligned, ion-implanted source and drain regions is overcome by implanting the dopant at a substrate temperature of = 400oC.

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Self-Aligned Aluminum Gate Process

       The known temperature problem of forming devices with an
aluminum (Al) gate and self-aligned, ion-implanted source and drain
regions is overcome by implanting the dopant at a substrate
temperature of = 400oC.

      The process comprises the steps of
      -    forming an Al gate on the gate oxide layer
           deposited on a semiconductor wafer,
      -    implanting ions of the dopant of, say, arsenic,
           boron or phosphorus, at a substrate temperature of
           = 400o C, using the Al gate as an implantation
           mask, and
      -    producing the electrical connections for the
           source, the drain and the gate.

      By implantation at an elevated substrate temperature, separate
activation of the dopant atoms at high temperatures is eliminated.