Browse Prior Art Database

Non-Chemically Amplified Positive Tone Resist

IP.com Disclosure Number: IPCOM000100826D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Brunsvold, WR: AUTHOR [+3]

Abstract

The work disclosed here describes the use of triflate salts, combined with base soluble resins, for positive tone photoresist systems in a manner analogous to DQN resists. These triflate inhibition systems have demonstrated good lithographic characteristics in the various exposure modes of photolithography.

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Non-Chemically Amplified Positive Tone Resist

       The work disclosed here describes the use of triflate
salts, combined with base soluble resins, for positive tone
photoresist systems in a manner analogous to DQN resists. These
triflate inhibition systems have demonstrated good lithographic
characteristics in the various exposure modes of photolithography.

      The work cited here uses several proprietary triflate type of
sensitizers as dissolution inhibitors combined with alkaline soluble
resins.  Depending on the triflates ability to inhibit dissolution,
these materials were combined with the resins at percentages ranging
from 2 to 20% of the alkaline soluble polymer.  Solutions were
formulated in a good lithographic casting solvent, spin coated on
silicon wafers, and baked to remove the excess casting solvent.
Typical exposure doses range from 20-50 mj with deep ultraviolet
radiation and 300-700 mj in hard X-ray radiation.  After exposure,
these systems were developed in alkaline developer until endpoint was
achieved.

      The figure shows alkaline soluble polymer and triflate
dissolution inhibitor exposed by X-ray radiation (0.7 um lines by
0.35 um spaces).