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Versatile Reference Voltage Source for Dynamic Random-Access Memories

IP.com Disclosure Number: IPCOM000100856D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 2 page(s) / 68K

Publishing Venue

IBM

Related People

Bush, RE: AUTHOR [+4]

Abstract

This network controls input to reference cells during normal operation, controls input voltage to reference cells during signal margin test, and controls voltage to bit lines during burn-in test of dynamic random-access memory (DRAM).

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 56% of the total text.

Versatile Reference Voltage Source for Dynamic Random-Access Memories

       This network controls input to reference cells during
normal operation, controls input voltage to reference cells during
signal margin test, and controls voltage to bit lines during burn-in
test of dynamic random-access memory (DRAM).

      Fig. 1 shows global signal distribution of external voltage
Vin1 and Vin2 at chip pads with control signals 3, 4, 5, and 6 which
are generated by network control circuit 10.  Array blocks, e.g., A1,
A2, and An, are shown in more detail in Fig. 2.  Lines 3 and 4
control transistors T1, T2, and T3.  A signal on line 5 to switches
12 and decoders 14 and 16 activates all word lines on a chip, e.g.,
reference word lines RWL and wordlines WL.  Line 6 controls switches
S1 through S6 shown in Fig. 1.  Lines 1 and 2 carry voltages Vin1 and
Vin2 from chip pads through switches S1 - S6 to array blocks A1
through An.  Sense amplifiers are not shown.

      Referring to Fig. 2, for regular array use, switches S1 through
S6 are off.  Transistor T3 is on.  Transistors T1 and T2 are pulsed
to periodically connect reference cell capacitor storage nodes N1 and
N2 to lines 1 and 2. Transistors T1 and T2 are on at all times
except during sensing of charge in the array and reference cells.
Lines 1 and 2 are at reference voltage Vref and share charge among
all the reference cells.  Reference word lines RWL are pulsed, first
to sense one reference cell charge an...