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Adjusting the Threshold Voltage of Semiconductor Devices After Metallization

IP.com Disclosure Number: IPCOM000100878D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 21K

Publishing Venue

IBM

Related People

Euen, E: AUTHOR [+2]

Abstract

The threshold voltage of a semiconductor device, which can only be determined after metallization, is adjusted to the desired value by ion implantation through the metal, e.g., aluminum, at a device temperature of about 450oC.

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Adjusting the Threshold Voltage of Semiconductor Devices After Metallization

       The threshold voltage of a semiconductor device, which
can only be determined after metallization, is adjusted to the
desired value by ion implantation through the metal, e.g., aluminum,
at a device temperature of about 450oC.

      After the metallization has been formed, the threshold voltage
is measured and the difference between the measured and the desired
value is determined.  Then, the threshold voltage is adjusted to the
desired value by implanting dopant ions at a dose sufficient to
compensate for the predetermined threshold voltage difference.  For
implantation, an MeV implanter is used and the device temperature is
raised to about 450oC.  By implanting at that temperature, the dopant
is activated in situ .  A separate anneal step is eliminated.