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Method of Forming Isolating Trenches of Minimum Width

IP.com Disclosure Number: IPCOM000100899D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 26K

Publishing Venue

IBM

Related People

Euen, E: AUTHOR [+2]

Abstract

The trenches are made of amorphous semiconductor material, such as silicon (Si), enclosed in monocrystalline semiconductor material. The trenches are formed by selective ion implantation and subsequent partial recrystallization.

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Method of Forming Isolating Trenches of Minimum Width

       The trenches are made of amorphous semiconductor
material, such as silicon (Si), enclosed in monocrystalline
semiconductor material.  The trenches are formed by selective ion
implantation and subsequent partial recrystallization.

      Figs. 1 and 2 are cutouts of a cross-section through an Si
wafer 1 illustrating two steps of the method.  On a monocrystalline
wafer 1 a mask 2 with an opening 3 is provided, which has the minimum
width (N1 mm) attainable by photolithography.  By implanting Si+ ions
through opening 3 in wafer 1, an amorphous Si trench 4 is formed
(Fig.  1). By heating the wafer at 550oC, trench 4 is reduced by
controlled partial recrystallization starting at the interface
between the monocrystalline and the amorphous Si. Fig. 2 shows the
residual, very narrow (N0.25 mm), trench 5 and the contour of the
original trench 4 in wafer 1.