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Browse Prior Art Database

Adhesive Layer for Polyimide-To-Substrate Lamination

IP.com Disclosure Number: IPCOM000101004D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 2 page(s) / 60K

Publishing Venue

IBM

Related People

Buchwalter, PL: AUTHOR [+6]

Abstract

Disclosed is a method for polymer-to-substrate (polymer, metal, ceramic materials, etc.) lamination in which polyimide, with relatively low glass transition temperature, is employed as an adhesive layer.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 59% of the total text.

Adhesive Layer for Polyimide-To-Substrate Lamination

       Disclosed is a method for polymer-to-substrate (polymer,
metal, ceramic materials, etc.) lamination in which polyimide, with
relatively low glass transition temperature, is employed as an
adhesive layer.

      Polyimide (PI) films such as poly(pyromellitic
dianhydride-oxydianiline) (PMDA-ODA), KAPTON H*, poly(bisphenyl
dianhydride-para- phenyldiamine) (BPDA-PDA) and UPILEX S** have poor
adhesion to PI, metal or ceramic materials after lamination at
350-400@C under 500-1000 psi. Thus thin layer(s) of adhesive(s) is
needed.  Only thermally stable adhesives can be applied for many
electronic applications since the structure may experience high
temperature during manufacturing.  Polymides with low glass
transition temperature exhibit good adhesive properties. THERMID***
is one of the polyimides with required properties and has been
employed here.

      POLYIMIDE-POLYIMIDE LAMINATION To coat THERMID (1-2 um) onto a
Quartz substrate, hydrolyzed 3-aminopropyltriethoxysilane adhesion
promoter is spin-coated to the Quartz wafer followed by THERMID
coating. The sample is subsequently cured at 400@C.

      Polymide coated films are prepared as follows: PMDA-ODA (23)
polyamic acid is spin-coated onto a Si wafer and cured at 175@C.
THERMID (1-2 um) isoimide solution is then spin-coated onto the
undercured PMDA-ODA.  The whole film is cured at 400@C for 40
minutes, and then delaminated from the wafer.  TH...