Browse Prior Art Database

Cr-P/Si Thin Film Cantilever Structures

IP.com Disclosure Number: IPCOM000101008D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Gambino, R: AUTHOR [+2]

Abstract

Disclosed is a process for making metallic thin film cantilevers suitable for scanning tunneling or force microscope tips.

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Cr-P/Si Thin Film Cantilever Structures

       Disclosed is a process for making metallic thin film
cantilevers suitable for scanning tunneling or force microscope tips.

      Through appropriate scribing, fracturing and etching steps it
is possible to fabricate <111> oriented silicon wafers into scanning
tips.  These tips are typically 10 mm long, 2 mm wide, .25 mm thick
and have a sharp, recessed 60-degree fracture point on one end.  Tip
resolution is increased by depositing a one micron-thick metallic
film of amorphous Cr-P on the surface of the silicon and then etching
back the silicon 100 microns to leave a pointed metallic cantilever.
Standard sputtering techniques are used to deposit the Cr-P.  The
amorphous Cr-P with P content between 40 and 15 atomic percent meets
the following requirements:
1.  it is a metal
2.  it has good adherence to the silicon substrate
3.  it is completely corrosion resistant to HF/HNO3 silicon etch.
4.  it is unstressed to eliminate cantilever curl

      The high electrical conductivity, reflectivity and flexibility
of the Cr-P allows cantilever deflection to be measured by reflected
laser beam, tunneling current or a combination of both.  This makes
it suitable for both field and force imaging.  Additional thin layers
can be deposited on the cantilever to suit the measurement.  For
example, a ferromagnetic film can be used to map magnetic field
gradients.