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Packaging Compatible High Temperature Silicon Nitride Passivation for GaAs/GaA1As Ridge Laser Diodes

IP.com Disclosure Number: IPCOM000101064D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 3 page(s) / 98K

Publishing Venue

IBM

Related People

Balasubramanyam, K: AUTHOR [+3]

Abstract

Described is a technique for embedding high temperature (250-325oC) silicon nitride (Si3N4) passivation layer in a graded-index separate confinement heterostructure (GRINSCH) GaAs/AlGaAs semiconductor laser diode. High temperature Si3N4 eliminates poor adhesion and 'nitride peel off' problems encountered during wirebonding process for films deposited at low temperatures (100oC).

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Packaging Compatible High Temperature Silicon Nitride Passivation for GaAs/GaA1As Ridge Laser Diodes

       Described is a technique for embedding high temperature
(250-325oC) silicon nitride (Si3N4) passivation layer in a
graded-index separate confinement heterostructure (GRINSCH)
GaAs/AlGaAs semiconductor laser diode.  High temperature Si3N4
eliminates poor adhesion and 'nitride peel off' problems encountered
during wirebonding process for films deposited at low temperatures
(100oC).

      At low deposition temperatures, the sticking coefficient of the
radicals on the depositing surface is poor.  Desorption rates of
entrapped byproducts, such as oxygen in the film during the film
growth, will be reduced. For example 2% oxygen was observed in films
deposited at 250oC as against 13% for films deposited at 100oC.
Large amounts of oxygen are due to the moisture or oxygen release
from the walls of the reactor chamber.

      At relatively high deposition temperatures (250oC), enhanced
diffusion of absorbed atoms into stable sites takes place during film
growth with the desorption of reaction byproducts from the surface.
Increased desorption and add atom diffusion rates at high substrate
temperatures yield films with fewer entrapped byproducts, higher
density fewer pin-holes and more uniform composition (refractive
index close to 2).  Such high temperature Si3N4 film using a
Probimide release layer in the resist pattern used to define the
ridge in the GRINSCH l...