Browse Prior Art Database

Integrated Process for Silicon Nitride Waveguide Fabrication

IP.com Disclosure Number: IPCOM000101202D
Original Publication Date: 1990-Jul-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 2 page(s) / 75K

Publishing Venue

IBM

Related People

May, PG: AUTHOR [+2]

Abstract

Disclosed is an integrated process for fabrication of a silicon-nitride waveguide with a silicon dioxide cladding layer for optical interconnections on a silicon chip. The waveguide is patterned on the silicon wafer and is easily incorporated as part of an integrated opto-electronic VLSI technology.

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Integrated Process for Silicon Nitride Waveguide Fabrication

       Disclosed is an integrated process for fabrication of a
silicon-nitride waveguide with a silicon dioxide cladding layer for
optical interconnections on a silicon chip.  The waveguide is
patterned on the silicon wafer and is easily incorporated as part of
an integrated opto-electronic VLSI technology.

      Current art for waveguides or fiber-optic coupling to silicon
devices involves attaching the guides or optical fibers to the
silicon devices after the device fabrication is complete.  This
becomes more and more difficult as the size of the device is
decreased, and as the vertical device profile is made shallower for
improved performance, the coupling efficiency suffers
correspondingly, since the light is incident on the device from
above.  The technique described here provides a method of fabricating
an optical waveguide using conventional silicon processing
techniques. The light is laterally incident on the device, allowing
maximum coupling efficiency, and using photolithography techniques
developed for VLSI applications, the waveguide is precisely aligned
to the device.  The waveguide is patterned before device fabrication,
leaving a planar surface, so that afterwards the silicon devices are
built according to a previously defined process without any
complications arising from the presence of the waveguides.  A general
process description is as follows:
1.  The masking layers are deposit...