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Etched Oxide for Lift-Off And Release Layer Applications for Positive And Negative Resists

IP.com Disclosure Number: IPCOM000101253D
Original Publication Date: 1990-Jul-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 4 page(s) / 156K

Publishing Venue

IBM

Related People

Kern, DP: AUTHOR [+3]

Abstract

Disclosed is a method to fabricate novel structures for microfabrication using positive or negative resist on a thin oxide layer on the substrate. The oxide can be used to facilitate lift-off techniques or as a release layer for the resist.

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Etched Oxide for Lift-Off And Release Layer Applications for Positive And Negative Resists

       Disclosed is a method to fabricate novel structures for
microfabrication using positive or negative resist on a thin oxide
layer on the substrate.  The oxide can be used to facilitate lift-off
techniques or as a release layer for the resist.

      A thin layer of oxide underneath positive or negative resist
can be used to produce useful structures for microfabrication.  The
resist is exposed using a lithographic technique (for example,
optical, electron-beam or X-rays) and developed.  The oxide
underneath can then be isotropically etched using buffered
hydrofluoric acid (BHF) or plasma etching.  Also, reactive ion
etching (RIE) can be used for anisotropic etching of the oxide. Fig.
1 shows the results of defining a 0.25 mm opening in 0.5 mm thick
novolac resist using electron-beam lithography.  The oxide underneath
the resist was then etched for 5 minutes in BHF. Fig. 2 shows one
example of how this structure could be used to lift- off small metal
structures for microfabrication.

      The oxide layer can also be used as a release layer, as shown
in Fig. 3.  After definition of the resist, etching of the oxide, and
deposition or other microfabrication technique (such as ion
implantation), the oxide and covering resist can be removed using
BHF.  Note that the oxide can be very thin as BHF diffusion effects
do not appear to be an issue.  Fig. 4 shows 0.25 a...