Browse Prior Art Database

Composite Planarization Barrier

IP.com Disclosure Number: IPCOM000101324D
Original Publication Date: 1990-Aug-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 2 page(s) / 79K

Publishing Venue

IBM

Related People

Brady, MJ: AUTHOR [+4]

Abstract

Fabrication of conventional semiconductor devices requires inorganic dielectric films which are used extensively for diffusion masks, as well as insulating and passivating layers. The composition and structure of the dielectric film determine its intrinsic properties, but many useful properties depend on the process and conditions used to deposit the film. Deposition parameters of these layers determine the dielectric constant, index of refraction, breakdown voltage, density, hardness, and permeability to ionic contaminants. Some of these requirements conflict with each other, depending on the stage of device fabrication, i.e., high temperature exposure effects diffusion profiles, or introduces semiconductor-metal alloy (Si-Al) formation.

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Composite Planarization Barrier

       Fabrication of conventional semiconductor devices
requires inorganic dielectric films which are used extensively for
diffusion masks, as well as insulating and passivating layers.  The
composition and structure of the dielectric film determine its
intrinsic properties, but many useful properties depend on the
process and conditions used to deposit the film.  Deposition
parameters of these layers determine the dielectric constant, index
of refraction, breakdown voltage, density, hardness, and permeability
to ionic contaminants.  Some of these requirements conflict with each
other, depending on the stage of device fabrication, i.e., high
temperature exposure effects diffusion profiles, or introduces
semiconductor-metal alloy (Si-Al) formation.  At the same time, high
temperature annealing or deposition may densify the film, making it a
better diffusion barrier.

      In the process of planarization of devices, high temperature
exposure is extremely critical, and yet is necessary for certain
properties.  The dielectric must have a reasonably high hardness
value, a low dielectric constant, and must serve as an ionic barrier
during the polishing process.  Present inorganic dielectric layers
include silicon dioxide, silicon nitride, and phosphosilicate glass,
each with its attendant deposition and process parameters.

      Disclosed is a technique that allows for (A) low temperature
deposition, (B) low dielectric constant, (C) high hardness value, and
(D) an ionic diffusion barrier (for cations), and provides the
capability of planarization of devices.  The method disclosed is a
composite system that can be incorporated into the presently used
process.  Thin films of ZrO2-SiO2, deposited by reactive DC magnetron
sputtering exhibit unique film properties depending on the silicon
dioxide content.  Typical values for the index of refraction and
hardness of zirconium dioxide with 0% sili...