Browse Prior Art Database

Wirebonding to Devices Through a Photoresist Barrier

IP.com Disclosure Number: IPCOM000101355D
Original Publication Date: 1990-Aug-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 26K

Publishing Venue

IBM

Related People

Berger, M: AUTHOR [+2]

Abstract

Wirebonding has been done successfully through a photoresist layer. Any foreign material existing between the wire and the bonding pad can act as a barrier that disrupts adhesional and frictional behavior of the materials. Organic materials usually inhibit bondability. Carbon and oxygen are extremely effective barriers to consistent ultrasonic bonding. Polymer coatings are used to protect devices from mechanical abrasions during sample preparation (scribing and dicing). The protective coating is removed prior to wirebonding.

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Wirebonding to Devices Through a Photoresist Barrier

       Wirebonding has been done successfully through a
photoresist layer.  Any foreign material existing between the wire
and the bonding pad can act as a barrier that disrupts adhesional and
frictional behavior of the materials. Organic materials usually
inhibit bondability.  Carbon and oxygen are extremely effective
barriers to consistent ultrasonic bonding.  Polymer coatings are used
to protect devices from mechanical abrasions during sample
preparation (scribing and dicing).  The protective coating is removed
prior to wirebonding.

      Silicon wafers with aluminum dots were coated with photoresist
at thicknesses ranging from 380 nm to 440 nm. The wafers were baked
at the prescribed temperature and time.  Samples were scribed, diced
and wirebonded using a Kulicke & Soffa ultrasonic wirebonder.  The
samples were electrically tested.  The data shows good electrical
contact.  Oxidation and damage did not occur to the samples.
Therefore, wirebonding was successful through the photoresist
barrier.