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Conductive Ceramics for Inner Chamber of Sputtering System

IP.com Disclosure Number: IPCOM000101519D
Original Publication Date: 1990-Aug-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Jurczyk, DH: AUTHOR [+2]

Abstract

It is proposed to use conductive ceramics instead of aluminum (A1) in the ground plane shield (GPS) area of sputtering tools to reduce flaking. The lower thermal coefficient of expansion would work advantageously in the SiO2 system.

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Conductive Ceramics for Inner Chamber of Sputtering System

       It is proposed to use conductive ceramics instead of
aluminum (A1) in the ground plane shield (GPS) area of sputtering
tools to reduce flaking.   The lower thermal coefficient of expansion
would work advantageously in the SiO2 system.

      Quartz flaking in SiO2 sputter systems is a major detractor to
tool availability and product yields.  The flaking is most severe in
the GPS area 1.  In the operation of the system, semiconductor wafers
2, located on an SiO2 plate 3, are subjected to sputtering.  The
plate is adjacent to the anode 4, while the SiO2 target 5 is adjacent
to the cathode 6 covered with an appropriate dielectric 7.

      The proposal suggests replacing the Al ground shield with a
conductive ceramic, adding a catch ledge 8 to retain any flaked
particulates.  Additionally, it is proposed to have a cylindrical
ceramic liner 9 replace the Al liner between the GPS area and chamber
wall 10.  The combined changes will function to reduce flaking and
thereby improve performance of the sputtering system.