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Application of Silylated Resist for Lift-off Process

IP.com Disclosure Number: IPCOM000101799D
Original Publication Date: 1990-Sep-01
Included in the Prior Art Database: 2005-Mar-16
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Kim, PS: AUTHOR

Abstract

This article outlines a process for using Silylated Imaged Resist (SIR) (1) for lift-off to improve yield and manufacturability.

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This is the abbreviated version, containing approximately 86% of the total text.

Application of Silylated Resist for Lift-off Process

       This article outlines a process for using Silylated
Imaged Resist (SIR) (1) for lift-off to improve yield and
manufacturability.

      An alternative lift-off structure to trilayer resist (2) can be
processed using a SIR approach.  This process converts the imaged
resist to form an 02 RIE barrier layer, eliminating the requirement
of the barrier materials, such as a plasma nitride and a resin glass.

      The imaged novolac resist is converted to a silicon
incorporated polymer by the use of Hexamethylcyclotrisilazane (HMCTS)
(1).  Silicon incorporated imaged resist has low 02 Reactive Ion Etch
(RIE) rate to provide a new type of barrier layer.

      Demonstration of SIR process has many advantages in a
manufacturing environment.  Direct advantages are reduced resist
stack (trilayer to bilayer), elimination overhang curling and
elimination of conical studs.  Some of the indirect advantages are
improved cycle time, improved yield, reduced rework cost, reduced RIE
time and reduced handling, hence reduced handling defects.

      Processing steps:
 1.   Deposit 3.8 mm of polyimide underlayer using double
      coat technique.
 2.   Bake for 1 hr. at 230oC.
 3.   Imaging resist diazoquinone-novolac (1.3 mm) and bake
      at 90oC for 5 min.
 4.   Image expose and develop.
 5.   Silylation in 40oC solution.
 6.   Bake for 30 minutes at 230oC.
 7.   O2 RIE for sev...