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Low Temperature Chemical Vapor Deposition of Tungsten for Stud Formation

IP.com Disclosure Number: IPCOM000101866D
Original Publication Date: 1990-Sep-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR

Abstract

A process is described and a material to accomplish semiconductor via filling at low temperatures compatible with the use of organic insulators.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 88% of the total text.

Low Temperature Chemical Vapor Deposition of Tungsten for Stud Formation

       A process is described and a material to accomplish
semiconductor via filling at low temperatures compatible with the use
of organic insulators.

      Advanced semiconductor interconnect process technology utilizes
stud formation to maintain planarization.  Some of the trade-offs
involved in determining the stud definition process include the via
hole aspect ratio, process temperature and process complexity.  A low
temperature stud definition process which can fill high aspect ratio
vias with minimal defects is described.

      The base concept is a low temperature chemical vapor deposition
of tungsten (CVD W) on titanium (Ti) or titanium nitride (TiN) film
and etch back to form a stud.  The low temperature CVD W has minimal
defects because it is formed in a cold wall reactor.  Depositions
made at 340 degrees C result in an acceptable resistivity (although
not as low as depositions made at higher temperatures) and enhanced
adhesion.  Better adhesion is probably due to the fact that Ti is
less likely to oxidize and be fluorinated at lower temperatures.  In
general, holes are not filled as well, and poorer adhesion results at
higher temperatures, while depositions at lower temperatures do not
result in low enough resistivity.  At low temperatures the silicon
level in the film jumps from 1% to 10% and the resistivity doubles.

      The film properties are optimum for low...