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Browse Prior Art Database

New Negative Photoresist Process

IP.com Disclosure Number: IPCOM000101879D
Original Publication Date: 1990-Sep-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Bakeman, PE: AUTHOR [+5]

Abstract

Removal of a predetermined thickness of negative photoresist by developing prior to exposure results in ability to restrict location of features to certain low regions of a surface topography. This technique has particularly beneficial application in forming conductive straps.

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This is the abbreviated version, containing approximately 100% of the total text.

New Negative Photoresist Process

       Removal of a predetermined thickness of negative
photoresist by developing prior to exposure results in ability to
restrict location of features to certain low regions of a surface
topography.  This technique has particularly beneficial application
in forming conductive straps.

      Referring to Fig. 1, a structure formed by standard processing
is comprised of gate conductor 10 over gate dielectric 12, sidewall
insulation 14, cap oxide 16, diffusions 18 in silicon substrate 19,
trench insulation 20, trench-fill conductor 22, and a conformal
conductive layer 24.  A negative photoresist 26 is then applied and
baked to the level indicated by the dashed line, and thinned by
immersion in a concentrated photoresist developer to complete the
cross section shown in Fig. 1.

      Referring to Fig. 2, exposure to an image having a dimension d,
normal photoresist development, etching to remove unprotected
conductive material 24, and resist stripping results in keeping layer
24 only in the regions known.  Thus, capacitance between strap 24 and
gate conductor 10 is kept low.  Since there is no conductive material
over sometimes defective insulation in region 28, the number of
shorts between strap conductor 24 and gate conductor 10 is very low.