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Source Barrier Field-Effect Transistor Structure for Short Channel, High Transconductance MOSFET/MESFET Design

IP.com Disclosure Number: IPCOM000101946D
Original Publication Date: 1990-Sep-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 3 page(s) / 82K

Publishing Venue

IBM

Related People

Codella, CF: AUTHOR [+2]

Abstract

A new design for MOSFET devices is described in this article, one which enables the channel length to be extremely short, i.e., less than 0.1 micron, thus enabling the fabrication of FETs with channel length much smaller than possible with conventional devices.

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Source Barrier Field-Effect Transistor Structure for Short Channel, High Transconductance MOSFET/MESFET Design

       A new design for MOSFET devices is described in this
article, one which enables the channel length to be extremely short,
i.e., less than 0.1 micron, thus enabling the fabrication of FETs
with channel length much smaller than possible with conventional
devices.

      A key feature of the disclosed device design is the use of a
band-gap discontinuity at the source-to-channel junction.  Fig. 1
shows source 1, gate 2, and drain 3 regions of the described device.
The material used in the source region has a bandgap that is narrower
than that of the material used in the channel and drain regions.
This causes a conduction band-edge potential step at the
source-channel junction 5, which opposes the flow of electrons from
the source into the channel, as shown in Fig. 2 (conduction band
energy vs. distance relative to the source-channel junction).  This
barrier to electron flow enables one to make the channel very short
without causing excessive punch-through current.

      In contrast to state-of-the-art MOSFET practices, in which
modified doping profiles are employed to suppress punch-through
current, the structure in this disclosure uses a bandgap modification
to accomplish this end.  This results in a very short channel device
(on the order of 0.1 micron or less) with a correspondingly high
transconductance which has a sustaining voltage much greater than
that of a convent...