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Method for Electrically Detecting Silicon Chips Having Edge Cracks

IP.com Disclosure Number: IPCOM000102044D
Original Publication Date: 1990-Oct-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 21K

Publishing Venue

IBM

Related People

Thoma, EP: AUTHOR

Abstract

A narrow conductive line formed near the periphery of semiconductor circuit chips is tested for opens and relative electrical resistance to detect chip edge damage. This test vehicle is used at stages, e.g., chip completion and module mounting, to identify handling and processing steps causing edge damage.

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Method for Electrically Detecting Silicon Chips Having Edge Cracks

       A narrow conductive line formed near the periphery of
semiconductor circuit chips is tested for opens and relative
electrical resistance to detect chip edge damage.  This test vehicle
is used at stages, e.g., chip completion and module mounting, to
identify handling and processing steps causing edge damage.

      By including a narrow line of a conductor, e.g., metal or
highly doped silicon, traversing the entire perimeter of integrated
circuit chips and terminated to permit making contact for testing
resistance of the line,  cracked or otherwise edge damaged chips may
be identified.  By making the line resistance test after several
steps of chip completion and bonding to modules, causes for chip edge
damage may be identified.