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Browse Prior Art Database

E-Beam Portable Conformable Mask Process

IP.com Disclosure Number: IPCOM000102079D
Original Publication Date: 1990-Oct-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 2 page(s) / 87K

Publishing Venue

IBM

Related People

Conley, WE: AUTHOR [+2]

Abstract

Disclosed is an E-beam PCM (portable conformable mask) process that allows high resolution E-beam written images with vertical profiles to be obtained in resist stacks thicker than 1.0 mm. E-beam written images with vertical profiles are difficult to obtain in a thick single layer resist since forward scattering of electrons causes the electron beam to spread as the beam travels through the resist.

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E-Beam Portable Conformable Mask Process

       Disclosed is an E-beam PCM (portable conformable mask)
process that allows high resolution E-beam written images with
vertical profiles to be obtained in resist stacks thicker than 1.0
mm.  E-beam written images with vertical profiles are difficult to
obtain in a thick single layer resist since forward scattering of
electrons causes the electron beam to spread as the beam travels
through the resist.

      This E-beam PCM process uses an acid catalyzed positive tone
E-beam-sensitive resist system 0.5 mm to 0.8 mm thick coated on top
of a deep UV-sensitive underlayer 1.0 mm to 1.5 mm thick.  The E-beam
resist system is exposed and developed as usual.  The wafer is then
flood exposed with deep UV radiation.  Absorbance of the E-beam
resist allows the deep UV radiation to penetrate the underlayer only
in the areas where the E-beam resist has been developed away.
Development of the exposed underlayer then transfers the original
E-beam written image into the underlayer.

      The requirements for the E-beam resist system include no
intermixing with the underlayer during coating, low E-beam dose
required and a high optical density in the deep UV.  A low E-beam
dose is required to prevent the E-beam dose deposited in the
underlayer from having an effect on the underlayer.  This E-beam
resist system is developed in 0.2IN TMAH developer which does not
attack the unexposed underlayer.  Anthracene methanol dye is add...