Browse Prior Art Database

Haze Control On Silicon Wafer

IP.com Disclosure Number: IPCOM000102082D
Original Publication Date: 1990-Oct-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 27K

Publishing Venue

IBM

Related People

Basi, JS: AUTHOR [+2]

Abstract

Presence of haze on silicon wafers interferes with ability to characterize surfaces. A basic process, such as described in (1), was used for polishing purposes with following controls at termination. 1) Polishing pressure 1-2 lb. 2) Termination cycle time 3 min. 3) Terminated temperature less than 35~C.

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Haze Control On Silicon Wafer

       Presence of haze on silicon wafers interferes with
ability to characterize surfaces.  A basic process, such as described
in (1),  was used for polishing purposes with following controls at
termination.
      1)   Polishing pressure                 1-2 lb.
      2)   Termination cycle time             3 min.
      3)   Terminated temperature             less than 35~C.

      At the beginning of termination cycle a 4% RODELENE* solution
(prepared by slow mixing of RODELENE with D.I. water and stored for
24 hours) is introduced onto the polishing machine while maintaining
constant supply of colloidal silicon dioxide-based slurry.  The ratio
between silicon dioxide slurry and RODELENE solution should be about
2 to achieve optimum results.  At the end of termination, wafers are
rinsed and stored in sodium hypochlorite solution for final cleaning
(2).

      For the present work RODELL* 750 and RODELL 205 polishing pads
were found to be very useful for termination process.  This process
can be successfully used on both single- and double-side polishing
machines.
*  Trademark of Rodell, Inc.

      References:
(1)  U.S. Patent 4,057,939
(2)  U.S. Patent 4,050,954.