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Synthesis of Deep UV Grade Polyhydroxystyrene

IP.com Disclosure Number: IPCOM000102090D
Original Publication Date: 1990-Oct-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 23K

Publishing Venue

IBM

Related People

Khojasteh, M: AUTHOR [+2]

Abstract

The synthesis of deep UV transparent polyhydroxystyrene polymer for use in acid-catalyzed resist formulations avoids use of basic catalysts, such as amines or nitrogen-derived bases. Traces of nitrogen bases left after the synthesis of polyhyrodroxystyrene (PHOST) resist lower the sensitivity of acid-catalyzed resist reactions. To avoid sensitivity losses, acids are used in the synthesis of PHOST. Acids, such as triflic acid, hydrochloric, p-toluene sulfonic acid and sulfuric acid in an organic solvent, are used in the hydrolysis of polyacetoxystyrene or polycarbonyloxystyrene to convert the precursor polymer to polyhydroxystyrene. The polyhydroxystyrene polymer made by acid hydrolysis of polyacetoxystyrene is also more UV transparent than the polymer made using organic nitrogen-derived bases.

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Synthesis of Deep UV Grade Polyhydroxystyrene

       The synthesis of deep UV transparent polyhydroxystyrene
polymer for use in acid-catalyzed resist formulations avoids use of
basic catalysts, such as amines or nitrogen-derived bases.  Traces of
nitrogen bases left after the synthesis of polyhyrodroxystyrene
(PHOST) resist lower the sensitivity of acid-catalyzed resist
reactions.  To avoid sensitivity losses, acids are used in the
synthesis of PHOST.  Acids, such as triflic acid, hydrochloric,
p-toluene sulfonic acid and sulfuric acid in an organic solvent, are
used in the hydrolysis of polyacetoxystyrene or
polycarbonyloxystyrene to convert the precursor polymer to
polyhydroxystyrene.  The polyhydroxystyrene polymer made by acid
hydrolysis of polyacetoxystyrene is also more UV transparent than the
polymer made using organic nitrogen-derived bases.