Browse Prior Art Database

Breaking of GaAs And InP Along a Crystal Plane

IP.com Disclosure Number: IPCOM000102483D
Original Publication Date: 1990-Nov-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 45K

Publishing Venue

IBM

Related People

Richard, H: AUTHOR

Abstract

Clean and atomically flat surfaces of GaAs and InP crystals are needed in many applications, e.g., in the fabrication of injection laser diodes and for the investigation of the surface physics of semiconductors. In order to obtain an atomically flat surface, the crystal is scribed at first at one edge and then a bending force is applied. Under such a force the micro-cracks in the scribing area grow rapidly and finally the crystal cleaves along a crystal plane starting from one of the micro-cracks if the proper force is applied. Proposed is an arrangement allowing the accurate adjustment of the optimum bending force.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 74% of the total text.

Breaking of GaAs And InP Along a Crystal Plane

       Clean and atomically flat surfaces of GaAs and InP
crystals are needed in many applications, e.g., in the fabrication of
injection laser diodes and for the investigation of the surface
physics of semiconductors.  In order to obtain an atomically flat
surface, the crystal is scribed at first at one edge and then a
bending force is applied.  Under such a force the micro-cracks in the
scribing area grow rapidly and finally the crystal cleaves along a
crystal plane starting from one of the micro-cracks if the proper
force is applied. Proposed is an arrangement allowing the accurate
adjustment of the optimum bending force.

      The arrangement is depicted in the figure.  The piece of the
semiconductor wafer 1, which is to be cleaved off, is inserted into a
slit 2 of a holder 3.  This holder should be made of a material which
is softer than the GaAs wafer, e.g., polyvinylchloride (PVC).  The
wafer is attached to the holder by clamping the brackets of the
holder together or with glue.  The scribe mark 4 can be made before
or after the wafer has been fixed to the holder.  Next, the holder is
attached to a base plate (not shown) and a bending force F is applied
to the wafer by placing a weight 5 on the wafer, as shown in the
figure.  The weight 5 is adjusted to the material and the wafer size
and thickness.  It is important not to increase the weight up to the
point (by moving it from right to the left) where...