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Browse Prior Art Database

New Reliable Precision Timing Element Structure/Process

IP.com Disclosure Number: IPCOM000102526D
Original Publication Date: 1990-Nov-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 31K

Publishing Venue

IBM

Related People

Niermann, DL: AUTHOR [+4]

Abstract

There is a significant improvement of the corrosion resistance of the precision timing element (PTE) structure when plasma-enhanced chemically vapor deposited (PECVD) organo-silicon coatings replace inorganic coatings.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

New Reliable Precision Timing Element Structure/Process

       There is a significant improvement of the corrosion
resistance of the precision timing element (PTE) structure when
plasma-enhanced chemically vapor deposited (PECVD) organo-silicon
coatings replace inorganic coatings.

      The PTE structure formed using this invention is shown in the
figure.

      The process by which the structure is formed is:
      1.  Build PTE die through Cr/Cu/Au metallurgy, (2) clean die
and card in FREON*, (+3) PECVD of 3000 A of an organo-silicon coating
in, e.g., an Applied Materials 3300 reactor at 85oC, using as a
source material hexamethyl disilazane, or other similar compounds
[*]; such coatings are adherent, conformal moisture barriers with low
pinhole density, (4) glue die to card, wire bond, laser trim, clean
in Freon*, (+3a) PECVD organo-silicon coating, (5) dip coat with
Uralane (6) test. + EITHER STEP (3) OR (3a), NOT BOTH
*  Trademark of E. I. du Pont de Nemours & Co.

      Reference (*) U.S. Patent 4,493,855.