Browse Prior Art Database

Planarization Transfer Imaging Process

IP.com Disclosure Number: IPCOM000102743D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Chesebro, DG: AUTHOR [+4]

Abstract

To allow use of any material as an etch mask and permit use of very thin photoresist to define very small features, photoresist images formed on a planar surface are overcoated with an etch mask material. Planarization then exposes the top surface of the photoresist and leaves the etch mask material in all other areas. Removal of the photoresist followed by etching creates a raised negative of the original photoresist image in underlying material.

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Planarization Transfer Imaging Process

      To allow use of any material as an etch mask and permit use of
very thin photoresist to define very small features, photoresist
images formed on a planar surface are overcoated with an etch mask
material.  Planarization then exposes the top surface of the
photoresist and leaves the etch mask material in all other areas.
Removal of the photoresist followed by etching creates a raised
negative of the original photoresist image in underlying material.

      Referring to Fig. 1, planar layer 2, which is to be patterned,
is on substrate 4.  Photoresist 6 images are formed and mask material
8 is blanket deposited.  A planarizing process is used to expose the
surface of photoresist 6, thus leaving mask material 8 in areas where
there is no photoresist.

      Fig. 2 shows the result of removing the photoresist and of
etching material 2.

      This process is especially useful where very thin photoresist
is desired for best resolution and where a non-erodable mask material
is required for deep etching.

      Disclosed anonymously.