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Browse Prior Art Database

A New Method to Prepare In-Based Ohmic Contacts Suitable for Mass Production

IP.com Disclosure Number: IPCOM000102786D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Kim, HJ: AUTHOR [+5]

Abstract

Disclosed is a method to prepare thermally stable, low resistance ohmic contacts to n-type GaAs which is suitable for mass production of GaAs metal-semiconductor field-effect transistors (MESFET) devices.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

A New Method to Prepare In-Based Ohmic Contacts Suitable for Mass Production

      Disclosed is a method to prepare thermally stable, low
resistance ohmic contacts to n-type GaAs which is suitable for mass
production of GaAs metal-semiconductor field-effect transistors
(MESFET) devices.

      Thermally stable, low resistance contacts are critical to
fabricate high performance GaAs devices.  AuNiGe materials are widely
used for various GaAs devices, because they provide sufficiently low
contact resistances.  However, the resistances increase and contact
edges deteriorate after annealing at 400oC for several hours, which
is required by subsequent fabrication process.

      Thermally stable, low resistance ohmic contacts have been
developed by depositing a small amount of In by a sputtering
technique.  Ohmic contacts are prepared by sputtering a single InAs
target and annealing at high temperatures for short times.  The
contacts provide low resistances, and excellent thermal stability is
demonstrated after annealing at 400oC for more than 100 hours, which
exceeds requirement for GaAs MESFET devices.  The contacts can also
be made with addition of Ni, Co, Pd, Mn, Ge, and/or W.

      Disclosed anonymously.