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Improved Ion Imaging of X-Ray Lithographic Masks

IP.com Disclosure Number: IPCOM000102789D
Original Publication Date: 1990-Jan-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Levine, JP: AUTHOR [+2]

Abstract

Disclosed are methods of improving the ion images of X-ray lithographic masks. Ion images taken under conventional conditions (e.g., 20 to 100 keV Gallium) reflect the grain structure of the gold absorber on the mask.

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Improved Ion Imaging of X-Ray Lithographic Masks

      Disclosed are methods of improving the ion images of X-ray
lithographic masks.  Ion images taken under conventional conditions
(e.g., 20 to 100 keV Gallium) reflect the grain structure of the gold
absorber on the mask.

      Method 1:  It was found that using ions of significantly higher
velocity than 100 keV gallium produced images with reduced absorber
grain influence.  This can be achieved using silicon, beryllium or
similar light ions.

      Method 2:  A thin layer of non-crystalline or finely grained
material on the surface of the mask is deposited. The deposited layer
then becomes the imaging layer, preventing the grain structure of the
absorber from interfering with the image.  Possible materials for
this use include metals that undergo oxidation such as aluminum,
copper, tungsten, etc., amorphous materials such as SiO2 or Carbon.
The material may be deposited over the entire mask or locally.  An
example of local deposition is focused ion beam induced
decomposition.

      Disclosed anonymously.