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Wiring Structure to Improve Interlevel Contact Resistance

IP.com Disclosure Number: IPCOM000102799D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 41K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR [+6]

Abstract

Contact between a stud conductor and a next level of conductive wiring is extended over the entire length of lines in that next level of wiring. The process for making the structure also permits selection of final via hole filling material for best filling and planarization (independent of conductivity). The structure can be especially useful in interfacing a superconducting material with a normal conductor.

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Wiring Structure to Improve Interlevel Contact Resistance

      Contact between a stud conductor and a next level of conductive
wiring is extended over the entire length of lines in that next level
of wiring.  The process for making the structure also permits
selection of final via hole filling material for best filling and
planarization (independent of conductivity).  The structure can be
especially useful in interfacing a superconducting material with a
normal conductor.

      Referring to the figure, an insulating layer 2 is deposited
over substrate 4 and has a via hole of width A opened to expose a
region of substrate 4 which is to be contacted.  A layer 6 of
material, which may be a conductor or superconductor, is conformally
deposited and has thickness to partially fill the via hole.  A
material 8, which is deposited to have good hole filling and
planarizing characteristics is then conformally deposited.  Layer 6
also acts as a planarizing stop material, thus maintaining original
thickness of layer 6 everywhere.  A next level of conductor or
superconductor is then deposited and patterned to form a line 10.
Layer 6 is then etched away from all areas not covered by line 10
material.

      Disclosed anonymously.