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Precision Resistors, Capacitors And Local Interconnects Crossing Over Gate Electrodes

IP.com Disclosure Number: IPCOM000102800D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 47K

Publishing Venue

IBM

Related People

Dunlop, LJ: AUTHOR [+3]

Abstract

By using one additional masking process, precision resistors are made in unsalicided lengths of doped polysilicon. The same process sequence allows making capacitors having salicided gate conductor forming one electrode and local interconnect conductor (LIC) forming second electrodes. The same process sequence allows making conductive lines of LIC over and insulated from gate electrodes.

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Precision Resistors, Capacitors And Local Interconnects Crossing Over Gate Electrodes

      By using one additional masking process, precision resistors
are made in unsalicided lengths of doped polysilicon.  The same
process sequence allows making capacitors having salicided gate
conductor forming one electrode and local interconnect conductor
(LIC) forming second electrodes.  The same process sequence allows
making conductive lines of LIC over and insulated from gate
electrodes.

      Referring to Fig. 1 which is a cross section A-A of plan view
Fig. 2, standard processing is used to deposit thick spacer oxide 10
on polysilicon gate electrode line 12 over recessed oxide 14 on
substrate 16.  A masking operation is then added to the standard
process to form spacer oxide regions 10a and 10b.  Oxide 18 is then
formed on all exposed polysilicon 12.  During standard deposition,
masking and etching of local interconnect conductor 20, one electrode
of a capacitor C is formed as shown in Fig. 2.  A second capacitor
electrode is polysilicon line 12.  A salicide process is then used to
form silicide 22 to complete the cross section Fig. 1.  Arrows in
Fig. 2 indicate a line of local interconnect conductor 20 passing
over and insulated from gate electrode 12.

      Length S of polysilicon line 12 is protected from the salicide
process by electrode 20 and spacer oxide structures 10a and 10b, thus
providing means to create a precision resistance R in series with low...