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Tungsten Etching Debris Reduction Method

IP.com Disclosure Number: IPCOM000102802D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 26K

Publishing Venue

IBM

Related People

Hill, W: AUTHOR [+3]

Abstract

Particulate debris residual after reactive ion etching (RIE) is reduced in number and size by 1) increasing the substrate temperature during etching, 2) rinsing in heated nitric/sulfuric acid following RIE, and 3) applying a high pressure, hot deionized water spray rinse following the acid rinse.

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Tungsten Etching Debris Reduction Method

      Particulate debris residual after reactive ion etching (RIE) is
reduced in number and size by 1) increasing the substrate temperature
during etching, 2) rinsing in heated nitric/sulfuric acid following
RIE, and 3) applying a high pressure, hot deionized water spray rinse
following the acid rinse.

      Particulate debris left on in-process wafers after an RIE
process is cause for product yield loss.  By increasing substrate
temperature during the RIE process, the number and size of particles
are reduced.  Further reduction in particle size and number is
achieved by immersing etched wafers in a mixture of nitric and
sulfuric acid heated to 50 - 90 degrees Celsius.  To further reduce
the particle number and to completely remove the acid, wafers are
then spray rinsed in deionized water which is heated to 50 degrees
Celsius.

      Disclosed anonymously.