Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

SER Immune Bipolar Array Cell

IP.com Disclosure Number: IPCOM000102829D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Banker, D: AUTHOR [+4]

Abstract

The cell disclosed in Fig. 1 is a bipolar array cell consisting of one (1) resistor and five (5) transistors. Two (2) Schottky Barrier Diodes (SBD's) are used to access the cell; however, various other types of devices, e.g., diodes, NPN and/or PNP transistors, could be used to access the cell. Transistors T1, T2, and Tref are PNP type transistors, and T3 and T4 are NPN type transistors. All transistors are operated in the inverse mode. This type of operation minimizes the critical area susceptible to alpha particle penetration because these areas are now connected to the power supply bus and thus reduce the soft error rate (SER) of the cell.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

SER Immune Bipolar Array Cell

      The cell disclosed in Fig. 1 is a bipolar array cell consisting
of one (1) resistor and five (5) transistors. Two (2) Schottky
Barrier Diodes (SBD's) are used to access the cell; however, various
other types of devices, e.g., diodes, NPN and/or PNP transistors,
could be used to access the cell.  Transistors T1, T2, and Tref are
PNP type transistors, and T3 and T4 are NPN type transistors.  All
transistors are operated in the inverse mode.  This type of operation
minimizes the critical area susceptible to alpha particle penetration
because these areas are now connected to the power supply bus and
thus reduce the soft error rate (SER) of the cell.

      The resistor provides a means to keep the cell saturated during
standby operation and non-saturated during word access.  If the cell
is in saturation, the susceptibility of the cell to alpha particles
is greatly decreased due to the high diffusion capacitance.  During
read and write, the cell is taken out of saturation and therefore
provides increased performance.  The cell is not susceptible to alpha
particles during read and write times due to the relatively high
currents required to read or write the cell during this period.

      Disclosed anonymously.