Browse Prior Art Database

Modification of Photoresist Surface

IP.com Disclosure Number: IPCOM000102839D
Original Publication Date: 1990-Feb-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Gut, GM: AUTHOR [+2]

Abstract

A modification of the surface state of a photoresist-coated and hardened semiconductor wafer is accomplished by a short exposure to an oxygen plasma. This treatment changes the surface from a hydrophobic to a hydrophillic one and facilitates subsequent photoresist processing.

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This is the abbreviated version, containing approximately 100% of the total text.

Modification of Photoresist Surface

      A modification of the surface state of a photoresist-coated and
hardened semiconductor wafer is accomplished by a short exposure to
an oxygen plasma.  This treatment changes the surface from a
hydrophobic to a hydrophillic one and facilitates subsequent
photoresist processing.

      Certain processing steps which are part of the semiconductor
wafer manufacturing process call for the hard baking of a photoresist
layer on a wafer surface after specific process steps, such as
fluorocarbon plasma etching. When a second photoresist layer is
coated on top of this layer (as may be required by the process), the
coating quality will be poor.  This poor coat quality is caused by
the low wettability of the hardened wafer surface.

      A short treatment of the hardened photoresist layer in an
oxygen plasma in a batch plasma tool for a duration sufficient to
remove 50 to 100 A of photoresist changes the surface state of the
resist.  Coating of photoresist upon this modified surface is simple
and results in excellent coating quality free of voids, streaks, and
other imperfections.

      Disclosed anonymously.