Browse Prior Art Database

Ion Implanted Capacitive Servo System for Magnetic Storage Using Silicon Disk Technology

IP.com Disclosure Number: IPCOM000102913D
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 22K

Publishing Venue

IBM

Related People

Clark, GJ: AUTHOR [+2]

Abstract

The use of an ion implanted layer beneath the surface of a silicon disk is described. The implanted material is Ti and when annealed forms TiSi2, which is conductive. The conductive regions beneath the surface of Si produce one of the electrodes of a capacitor, which is used as part of a capacitive servo system for magnetic storage. Servo tracks are formed by implanting through a mask and annealing at 600oC for 2 hours. Under these conditions, TiSi2 patterns are grown beneath the silicon surface, leaving the surface predominantly planar.

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Ion Implanted Capacitive Servo System for Magnetic Storage Using Silicon Disk Technology

      The use of an ion implanted layer beneath the surface of a
silicon disk is described.  The implanted material is Ti and when
annealed forms TiSi2, which is conductive.  The conductive regions
beneath the surface of Si produce one of the electrodes of a
capacitor, which is used as part of a capacitive servo system for
magnetic storage.  Servo tracks are formed by implanting through a
mask and annealing at 600oC for 2 hours.  Under these conditions,
TiSi2 patterns are grown beneath the silicon surface, leaving the
surface predominantly planar.

      Disclosed anonymously.