Browse Prior Art Database

Metal Reach-Through Contacts

IP.com Disclosure Number: IPCOM000102918D
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 26K

Publishing Venue

IBM

Related People

Ning, TH: AUTHOR

Abstract

Disclosed is the concept of using metal instead of heavily doped silicon as the reach-through contacts in bipolar devices.

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Metal Reach-Through Contacts

      Disclosed is the concept of using metal instead of heavily
doped silicon as the reach-through contacts in bipolar devices.

      Tungsten, which can be deposited selectively at relatively low
temperatures and at relatively high rates, is a very good candidate
metal for such reach-through contacts.

      Since metal makes good ohmic contacts to both heavily doped
p-type as well as heavily doped n-type silicon, metal reach-through
contacts are particularly advantageous for complementary vertical
bipolar technology where reach-through contacts are needed for both
the npn and the pnp devices.  This is illustrated in Fig. 1.

      Disclosed anonymously.