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Salvage Process for Wafers Having Incorrectly Etched Contact Holes

IP.com Disclosure Number: IPCOM000102927D
Original Publication Date: 1990-Apr-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 31K

Publishing Venue

IBM

Related People

Clodgo, D: AUTHOR [+2]

Abstract

Wafers may be recovered which have had an oxide etched with the wrong contact hole pattern by a process which includes filling the etched holes in the oxide with spin on glass (SOG) and planarizing.

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Salvage Process for Wafers Having Incorrectly Etched Contact Holes

      Wafers may be recovered which have had an oxide etched with the
wrong contact hole pattern by a process which includes filling the
etched holes in the oxide with spin on glass (SOG) and planarizing.

      Referring to Fig. 1, an incorrect hole pattern in oxide 10,
exposing metal line 12 on substrate 14, is stripped of photoresist,
cleaned, and SOG 16 is applied and cured.

      Referring to Fig. 2, a planarizing polish is used to remove SOG
outside of holes and to remove a small amount of original oxide 10.
Then, a conformally deposited coating of oxide 18 is deposited, thus
restoring total oxide 18 plus remainder of oxide 10 to be about the
original thickness of oxide 10.  A wafer salvaged in this manner may
then be put through the standard photo and etching process to form
correctly placed contact holes.

      Disclosed anonymously.