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Browse Prior Art Database

Selective Surface Silylation of Photoresist

IP.com Disclosure Number: IPCOM000103000D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Bruce, JA: AUTHOR [+3]

Abstract

By a double exposure process, etch rate ratio of image area to background area (selectivity) of silylatable photoresist is improved and processing time is reduced.

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This is the abbreviated version, containing approximately 100% of the total text.

Selective Surface Silylation of Photoresist

      By a double exposure process, etch rate ratio of image area to
background area (selectivity) of silylatable photoresist is improved
and processing time is reduced.

      Any of several phenolic resins, such as positive acting
azo-ketone sensitized systems, are blanket exposed after an imaging
exposure.  The blanket exposure can be deep ultraviolet (UV) or near
UV depending on whether the imaging exposure is by near UV or deep
UV, respectively.  With a near UV imaging exposure, the deep UV
blanket exposure renders the background area less susceptible to
silylation by conventional immersion in silylation compounds.  A near
UV blanket exposure following a deep UV imaging exposure renders the
background area more susceptible to silylation. In either case,
selectivity is enhanced.

      Time to etch through double-exposed photoresist by a
conventional reactive ion etching process is about half the time to
etch through the same resist having been conventionally singly
exposed while leaving 75% to 100% of the original thickness of the
efficiently silylated region. Thus, thinner resist may be used to
reduce etching residue and to further reduce etching process time.

      Disclosed anonymously.