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Process to Make Thick Wide and Thin Narrow Conductive Lines

IP.com Disclosure Number: IPCOM000103008D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Cronin, JE: AUTHOR

Abstract

To make wide thick lines for heavy current carrying-capacity and narrow thin signal lines for low capacitance, sputter removal of an insulating overlayer is used to form a protective cover over the wide lines while the narrow lines are being thinned by etching.

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Process to Make Thick Wide and Thin Narrow Conductive Lines

      To make wide thick lines for heavy current carrying-capacity
and narrow thin signal lines for low capacitance, sputter removal of
an insulating overlayer is used to form a protective cover over the
wide lines while the narrow lines are being thinned by etching.

      Referring to Fig. 1, conductive lines 10 and 12 are formed on
an insulating substrate 14 by conventional methods.  Insulator 16 is
conformally deposited next.  RF sputter etching is used to remove the
top surface of layer 16 until a planar condition is reached over line
12.

      Referring to Fig. 2, reactive ion etching is used to remove
more of layer 16 until the surface of line 12 is fully exposed.
Exposed metal is selectively etched to make the narrow lines thin.
The remainder of layer 16 may be removed or left in place depending
on subsequent processing requirements.

      Disclosed anonymously.