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The Use of Copper/Invar/Copper Planishing Plates for High Temperature Lamination

IP.com Disclosure Number: IPCOM000103020D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 44K

Publishing Venue

IBM

Related People

Hunsinger, LE: AUTHOR [+2]

Abstract

High temperature lamination is required to meet the low dielectric constants used in the high density computer technologies. Also, materials with low coefficient of expansion were required to meet the low expansion of the silicon chip. A base material of copper/invar/copper (CIC) was selected for the above reasons. (Image Omitted)

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The Use of Copper/Invar/Copper Planishing Plates for High Temperature Lamination

      High temperature lamination is required to meet the low
dielectric constants used in the high density computer technologies.
Also, materials with low coefficient of expansion were required to
meet the low expansion of the silicon chip.  A base material of
copper/invar/copper (CIC) was selected for the above reasons.

                            (Image Omitted)

      When laminating the low dielectric constant material to the CIC
base material, it is required to have good adhesion with minimum
movement in the base CIC material.

      The use of CIC planishing plates, having a similar coefficient
of expansion as the CIC base material being laminated, resulted in
minimal movement of the base material during lamination which
produced good dimensionally stable parts.  Outer Teflon* pads are
used to cover the lamination stack during the lamination process.

      These CIC plates are currently being used where applicable in
the high density lamination technologies.
*TEFLON is a trademark of E.I. du Pont de Nemours & Co.

      Disclosed anonymously.