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Rie Made Molybdenum Mask

IP.com Disclosure Number: IPCOM000103065D
Original Publication Date: 1990-May-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Kin, CC: AUTHOR [+3]

Abstract

This article describes a process to make the Molybdenum (Mo) mask which has the aspect ratio (mask thickness vs. feature size) greater than 1.

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This is the abbreviated version, containing approximately 100% of the total text.

Rie Made Molybdenum Mask

      This article describes a process to make the Molybdenum (Mo)
mask which has the aspect ratio (mask thickness vs. feature size)
greater than 1.

      As show in the Fig. 1, a thin layer of patterned RIE (reactive
ion etching) resistant material, such as Copper, or Nickel, is
deposited on the surfaces of the Mo foil.  The patterned RIE
resistant material can be deposited by wet etching process, plating
process, or lift-off process.  The organic resist cannot be used due
to high temperature and high ion energy during the following RIE
process.

      As shown in the Fig. 2, the Mo foil with the patterned RIE
resist is then RIE etched in CF4/02, or SF6/02 chemistry.  The foil
is placed on the powered electrode and is etched one side at a time.
With controlled process parameters, directional etching is achieved.
After RIE, the RIE mask is stripped to obtain the Mo mask, as shown
in the Fig. 3.

      Disclosed anonymously.