Browse Prior Art Database

Metal Ion-Free Developable I-Line Photoresist

IP.com Disclosure Number: IPCOM000103105D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Brunsvold, WR: AUTHOR [+4]

Abstract

Disclosed is a formulation for a highly sensitive I-line photoresist with good contrast and metal ion-free developability.

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This is the abbreviated version, containing approximately 100% of the total text.

Metal Ion-Free Developable I-Line Photoresist

      Disclosed is a formulation for a highly sensitive I-line
photoresist with good contrast and metal ion-free developability.

      Tert-butoxycarbonyloxystyrene copolymers and readily soluble in
metal ion-free developers over a range of concentrations.  This fact
makes this material extremely attractive to semiconductor
manufacturers; since these developers do not introduce metals capable
of causing future contamination, such as shorts, and limit the
environmental concerns about disposal.

      The photoresist is composed of t-butoxycarbonyloxystyrene
copolymer, and diazonapthoquinone which serves as the dissolution
inhibitor, and propylene glycol mono ethyl ether acetate as the
casting solvent.

      The ratio of polymer to inhibitor was 4:1, by weight, and the
developer used was MF-319 (0.235 N tetramethyl ammonium hydroxide).
The development time was 60 seconds (immersion) with resolution down
to 0.7 microns.  Contrast ranged from 2.7-3 depending on developer
concentration and amount of photoactive compound used.

      Disclosed anonymously.