Browse Prior Art Database

Self-Aligned, Low-Aspect Ratio Ion Milling Mask

IP.com Disclosure Number: IPCOM000103117D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Related People

Santini, HAE: AUTHOR

Abstract

Disclosed is a process to produce ion-milling masking structures to be used during the pole tip fabrication of thin film heads.

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Self-Aligned, Low-Aspect Ratio Ion Milling Mask

      Disclosed is a process to produce ion-milling masking
structures to be used during the pole tip fabrication of thin film
heads.

      During the patterning of the ferromagnetic poles, special care
must be given to the Z (vertical) alignment with each other.  One way
of producing perfect alignment is to manufacture wide pole tips, then
later by positioning a masking structure and while using ionic
bombardment, etch away the extra material leaving behind both poles
perfectly aligned and with the same dimension (at the gap region).

      During the fabrication of the second pole piece, a photoresist
frame is used to pattern an electroplated ferromagnetic material.
The suggestion is that after the electroplating operation, and
without removing the photoresist, a thick (1-3 mm) layer of sputtered
dielectric material (such as Al2O3) is applied.  The following
photolithographic operation will pattern a resist structure covering
the plating frame.  A chemical etch of the dielectric material and
subsequent removal of the resist frame will leave behind the second
ferromagnetic element, covered now with an equal width layer of
dielectric material.  By using both structures as an ionic milling
mask, their widths can now be propagated into the underlying first
ferromagnetic element, thus obtaining their perfect alignment.

      Disclosed anonymously.