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An Effective Method to Enable to use Photosensitive Polyimde for Multilayer Thin Film Wiring Structures

IP.com Disclosure Number: IPCOM000103121D
Original Publication Date: 1990-Jun-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 64K

Publishing Venue

IBM

Related People

Miersch, E: AUTHOR [+3]

Abstract

In order to meet the ever increasing complexity of packaging for higher performance computers, the importance of thin film packages, particlularly with polymeric insulators, is increasing very fast. The polymer thin film dielectric in combination with high conductivity metals provide numerous advantages over the traditional ceramic multilayer packages. If the polymer dielectric, primarily polyimides, is photosensitive, the fabrication process can be even simpler and cost effective.

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An Effective Method to Enable to use Photosensitive Polyimde for Multilayer Thin Film Wiring Structures

      In order to meet the ever increasing complexity of packaging
for higher performance computers, the importance of thin film
packages, particlularly with polymeric insulators, is increasing very
fast. The polymer thin film dielectric in combination with high
conductivity metals provide numerous advantages over the traditional
ceramic multilayer packages. If the polymer dielectric, primarily
polyimides, is photosensitive, the fabrication process can be even
simpler and cost effective.

      Two most serious difficulties involved with PSPI are: 1) volume
shrinkage and stress build-up during C-cure step, 2) difficulty in
exposure due to the high UV absorption of the backbone polymer.  The
present disclosure describes a multiple exposure method which makes
the use of most PSPI easier for packaging applications less sensitive
to the chemistry of the materials.  For example most commercial PSPI
can form layers up to 3-5 microns thick C-cured layers by single
processing without adverse effects. This invention involves double
exposure.  In order to achieve, for example, 10 microns thick layer,
first a PSPI precursor layer thick enough to achieve 5 micron C-cured
thickness is coated on a substrate. The film is baked, exposed,
developed, and C-cured.  Another PSPI precursor is coated over the
patterned PSPI layer.  After the second precursor layer of the same
thic...