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Increased Wafer Cooling During a Quartz Sputtering Process

IP.com Disclosure Number: IPCOM000103161D
Original Publication Date: 1990-Jul-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 43K

Publishing Venue

IBM

Related People

Jurczyk, DH: AUTHOR [+4]

Abstract

Described is a means for increasing the thermal absorptive properties of the water-cooled copper anodes used to support silicon wafers during quartz sputtering processes. The resultant lowering of wafer temperatures achieved by the disclosed technique improves the uniformity of quartz coatings obtained across the wafers and reduces quartz penetration problems previously encountered with production wafers.

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Increased Wafer Cooling During a Quartz Sputtering Process

      Described is a means for increasing the thermal absorptive
properties of the water-cooled copper anodes used to support silicon
wafers during quartz sputtering processes.  The resultant lowering of
wafer temperatures achieved by the disclosed technique improves the
uniformity of quartz coatings obtained across the wafers and reduces
quartz penetration problems previously encountered with production
wafers.

      Quartz (Si02) deposition on silicon wafers is conducted at
wafer temperatures of 300oC or greater.  The higher the wafer
temperature, the greater its exposure to quartz penetration by
aluminum or other metal films present which react with the silicon to
cause emitter-base junction current leakage or shorts

      Fig. 1 shows a cross-section drawing of an improved water-
cooled copper anode.  The anode 1 has been given a black surface
plating 2 by means of a silicon carbide or chrome anodizing treatment
to a depth of .003 to. 008 inches (3).  The purpose of this anode
blackening treatment is to eliminate the reflectivity of wafer heat
radiation present and to improve the thermal absorptive properties of
the water-cooled anode.  The reduction in the amount of heat energy
thereby absorbed by the wafer allows it to be processed at least 50oC
cooler, as verified by measurements performed with a calibrated
thermo-couple wafer and an IRCON non-contact measuring device.

      Disclosed ...